European Projects, ENIAC
Date: 31/03/2012 - 30/03/2015
Coordinator:
Infineon Technologies Austria AG
Consortium:
22 partners from 5 nations
Volume:
43,6 Mio. €
Project:
The volume manufacturing benefits of 300 mm silicon wafer fabrication are well-established with regard to digital integrated circuits but the ability to use them in the production of power semiconductor devices has so far eluded large-scale producers. The ENIAC JU project EPT300 aims to develop and implement technology to achieve full-scale production of power devices on 300 mm wafers. This will place European fabs at the forefront of power semiconductor manufacturing worldwide and open up further employment opportunities both in the fabs and across the entire European electronics industry.
Postal address ECPE e.V.:
ECPE European Center for Power Electronics e.V.
Ostendstrasse 181
D-90482 Nuremberg, Germany
Phone: +49 (0)911 81 02 88-0
© 2018 ECPE European Center for Power Electronics e.V.
