European Projects, ENIAC
Date: 31/03/2013 - 30/03/2016
Coordinator:
ON Semiconductor Belgium BVBA
Consortium:
24 partners from 9 nations
Volume:
29,2 Mio. €
Project:
Highly efficient power conversion is at the heart of the worldwide effort for a green economy, requiring devices with improved capabilities, feasible by replacing the silicon basis material with compound materials with a wide band-gap such as gallium nitride (GaN). The ENIAC JU project E2COGaN will demonstrate the benefits of GaN devices in micro-grid interfacing circuits for photovoltaic power generation and in grid-connected chargers for high voltage batteries for electro-mobility, establising a pan-European GaN power electronics ecosystem and competence.
Postal address ECPE e.V.:
ECPE European Center for Power Electronics e.V.
Ostendstrasse 181
D-90482 Nuremberg, Germany
Phone: +49 (0)911 81 02 88-0
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