Penta - Next Generation GaN Power Module (GaNext)

Coordinator:
Cambridge GaN Deices Ltd

Consortium:
13 partners from 3 countries 

Volume:
10,3 Mio. €

Project:
The GaNext Penta project is undertaken by a powerful consortium with complementary expertise in GaN technology, high-frequency drivers, magnetics, smart controllers and end-user dedicated applications in the diverse field of power electronics. The consortium involves 13 partners from the industry and academia, covering all aspects of power conversion. Cambridge GaN Devices (CGD) was spun out of the High Voltage Microelectronics and Sensors group in the Department of Engineering at Cambridge University in 2016 to develop Gallium-Nitride on Silicon substrate power semiconductors. CGD is developing GaN devices that can be driven in a similar way to Silicon transistors and are easy to use. The company’s technology allows easy control using standard MOSFET drivers as well as micro-controllers and complements this with additional smart features and protection functions, fully embedded into its product solutions. “Thus the Penta project creates a tremendous opportunity for CGD to engage with leading-edge companies in the area of power electronics. Not only will the project advance the knowledge in GaN technology and provide insights into its complex facets, but will aim at delivering fully-working prototypes in lighting, motor drives, converter blocks for renewable energies and on-board chargers for automotive with record specifications and outstanding performance,” said Dr Giorgia Longobardi, CGD’s founder and CEO. Prof Florin Udrea, professor in semiconductor engineering, CTO and founder added: “The quality of the Penta consortium is remarkable and I have no doubt that we will deliver on the promises to make GaN technology a great success in the market. There is also a broader impact in adding our contribution to our ultimate quest for better use of energy resources and a cleaner environment.” AS

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