Andreas Lindemann / OVGU
Since more than 12 years the biannual ECPE Wide Bandgap User Forum has given advise and support to the introduction and the usage of SiC and GaN devices in power electronic systems. Major progress has been achieved, with today a multitude of SiC diodes and transistors being available and used in series products. For those, special aspects gain importance, such as robustness or qualification when exposed to demanding mission profiles. On the other hand ongoing research and development work is dedicated e. g. to increase voltage and current ratings of SiC devices, to GaN devices including their integration, the respective packaging technology and of course to the applications. Some main topics of this year’s ECPE wide bandgap user forum are summarised in the following:
Eckhard Wolfgang
The first handbooks on Robustness Validation were available in the years 2006/07. They were worked out by the German ZVEI, the US SAE and the Japanese SAE. They describe a process how to design, develop, manufacture and test electronic devices, components and systems.
Prof. Andreas Lindemann / University of Magdeburg
Prof. Nando Kaminski / University of Bremen
The CIPS Conference 2018 took place in Stuttgart and was held in conjunction with the ECPE Annual Event 2018. It was an outstanding networking event with 330 participants. Numerous interesting presentations from authors and exhibitors pointed out the new developments and trends in the area of Integrated Power Electronics Systems. The 10th International Conference on Integrated Power Electronics Systems (CIPS 2018) brought together engineers coming from academia and industry involved in component development, system development, research and reliability engineering.
Andreas Lindemann / OVGU
ECPE wide bandgap user forum recently celebrated a decadal anniversary: As premier event of this kind it has accompanied the development of Silicon Carbide (SiC), Gallium Nitride (GaN) and other wide bandgap power semiconductor devices and their design-in into circuits and systems for more than ten years. Following several other European venues the seventh event took place in March at Nurnberg. The highest number of registrations ever showed the great interest of power electronics community in this actual subject. Main technical focus has been on new developments with SiC and GaN transistors including system and circuit design, related aspects like packaging and parasitics, and an outlook on future prospects.
Andreas Lindemann / OVGU
ECPE wide bandgap user forums have established as an international event where users | i.e., engineers developing advanced power electronic converters | and manufacturers of Silicon Carbide (SiC) and Gallium Nitride (GaN) devices meet biannually for a fruitful exchange. It recently was prepared in conjunction with a newly established ECPE SiC & GaN technical committee and hosted by University of Warwick (UK). The highest number of registrations ever showed the great interest of the community in this actual subject. Main technical focus has been on new developments with SiC and GaN transistors including system and circuit design or related aspects like packaging and parasitics. Renowned experts from all over the world have been invited to explain state of the art and trends, to foster physical understanding, to in depth explain their research and development work in technical presentations and to share their knowledge in discussions. The wide bandgap user forum this way has established a valuable platform to share experience and ideas, to show best practise of power electronic systems with of SiC or GaN, to discuss and nd out how to appropriately design-in those almost ideal but also challenging components, and which open issues need to be addressed. It aimed at pointing out approaches to exploit the high potential of those devices and to support their bene cial introduction in power electronic systems. Connected meetings of relevant research projects impressively complemented this aspect. The main topics of this year's ECPE wide bandgap user forum are summarised in the following...
Christian Boit / Berlin University of Technology
The 25th anniversary of the European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF) was held September 29 to October 2, 2014, in Berlin, Germany.
Eckhard Wolfgang / ECPE
Dieter Silber / University of Bremen
292 engineers and scientists attended the conference, 24% more than 2012.
Attendees came from 17 countries in Europe, America and Asia with 22 participants alone from Japan. The 8th International Conference on Integrated Power Electronics Systems (CIPS 2014) was held on 25-27 February 2014 in Nuremberg as part of the ECPE Annual Event. The Conference is organized by ETG, the Power Engineering Society within VDE, and by ECPE, the European Center of Power Electronics. IEEE PELS and ZVEI are technical co-sponsors.
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