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The Institute of Robust Power Semicon-
ductor Systems (ILH) has been established
in 2013 at the University of Stuttgart in
the frame of the Robert Bosch Center for
Power Electronics (rbz).
The ILH conducts research on power
semiconductor integrated circuits and
modules using wide bandgap power
semiconductors (GaN, SiC) with a
focus on:
•
Characterization and modeling of
power semiconductor devices
•
Integration, packaging and assembly
of power semiconductor circuits and
modules
•
Efficiency, power density and robust-
ness of power semiconductor systems.
Institute of Robust Power Semiconductor Systems
University of Stuttgart
Characterization and Modeling
The ILH concentrates research on devel-
opment of equivalent circuit based tran-
sistor models for SiC and GaN power
devices. Characterization and modeling of
the static and dynamic characteristics of
modern wide bandgap power semicon-
ductors is a key requirement for the suc-
cessful design of power converters, inte-
grated circuits and systems. In addition to
electrical simulation, electro-thermal co-
simulation improves the simulation and
design of power modules and systems.
Integration, Packaging and Assembly
Technology
High power density and high switching
frequencies impose stringent require-
ments on packaging technologies. By
appropriate approaches such as 3D pack-
aging, parasitic effects that are caused by
packages, substrates and layouts, can be
systematically influenced and reduced.
Efficiency, Power Density and
Robustness
Approaches to increase the power den-
sity are the hybrid and monolithic integra-
tion of gate-driver and power converter
circuits, as well as active and passive com-
ponents. To ensure robustness of the sys-
tems, the thermal behavior and EMC of
power modules is studied and optimized.
“Multi-chip-module (MCM)”:
Full bridge (1.2kV SiC MOSFETs), gate drivers and bootstrap supply on an AlN DBC substrate.
Multi-chip-module (MCM) soldered on a printed
circuit board (PCB) for low-inductive connection
of dc-link for fast-switching converters.
Electro-thermal co-simulation of full bridge
multi-chip-module.
